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Photoluminescence study of shallow impurities localization in transmutation doped GaAs

✍ Scribed by V.A Bykovsky; V.I Khit'ko; V.F Shoh; V.I Utenko


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
99 KB
Volume
93
Category
Article
ISSN
0038-1098

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A photoluminescence study of highly doped tensile-strained GaAs quantum wells is made to in¨estigate the feasibility of achie¨ing polarization-independent photodetection. A simulation procedure to predict the photoluminescence peaks is also de¨eloped which shows good agreement with the experimental