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Photoluminescence study of magnesium doped movpe indium phosphide

✍ Scribed by F.R. Bacher; W.B. Leigh


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
211 KB
Volume
80
Category
Article
ISSN
0022-0248

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Iron-doped indium phosphide layers were grown by gas source molecular beam epitaxy with a high purity solid iron source. The iron concentration varied from some 1016 cm -3 to a few 10 ~9 cm -3. N-i-n or n+-i-n + layer structures were realized on two types of substrate: semi-insulating or n Γ·. Some i