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Spatial investigation of an iron-doped indium phosphide ingot

✍ Scribed by H. L'Haridon; P.N. Favennec; R. Coquille; M. Salvi; M. Gauneau; Y. Le Guillou; R. Callec; P. Gall


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
882 KB
Volume
50
Category
Article
ISSN
0169-4332

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Iron-doped indium phosphide layers were grown by gas source molecular beam epitaxy with a high purity solid iron source. The iron concentration varied from some 1016 cm -3 to a few 10 ~9 cm -3. N-i-n or n+-i-n + layer structures were realized on two types of substrate: semi-insulating or n Γ·. Some i