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Photoluminescence study of Ce-doped silica films

✍ Scribed by Wei-Yan Cong; Su-Mei Li; Ying-Jie Wang; Lin Tao; Xiao-Yan Liu; Wei-Min Zheng


Book ID
113720902
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
352 KB
Volume
132
Category
Article
ISSN
0022-2313

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## Abstract Ce‐doped silica films with various Ce concentrations were prepared via ion beam sputtering (IBS) and ion implantation. The samples containing 1.46 at.% Ce were annealed at various temperatures from 500 to 1100 °C in air ambient and a separate sample with the same Ce concentration was an

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