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Photoluminescence studies of Sn quantum dots in Si grown by MBE

✍ Scribed by A. Karim; G.V. Hansson; W.-X. Ni; P.O. Holtz; M. Larsson; H.A. Atwater


Book ID
108233876
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
559 KB
Volume
27
Category
Article
ISSN
0925-3467

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We report on the growth and optical properties of gallium nitride quantum dots (QDs) grown by plasma-assisted molecular beam epitaxy. We have observed strong photoluminescence (PL) from the QDs from 8 to 750 K. Atomic force microscopy studies demonstrate that the QDs have diameters of (30 AE 5) nm a