Temperature Dependent Photoluminescence
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J. Brown; C. Elsass; C. Poblenz; P.M. Petroff; I.S. Speck
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Article
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2001
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John Wiley and Sons
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English
β 148 KB
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We report on the growth and optical properties of gallium nitride quantum dots (QDs) grown by plasma-assisted molecular beam epitaxy. We have observed strong photoluminescence (PL) from the QDs from 8 to 750 K. Atomic force microscopy studies demonstrate that the QDs have diameters of (30 AE 5) nm a