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Photoluminescence studies of Si (100) doped with low-energy (≤1000 eV) As+ ions during molecular beam epitaxy

✍ Scribed by Noël, J.-P.; Greene, J. E.; Rowell, N. L.; Kechang, S.; Houghton, D. C.

Book ID
120088094
Publisher
American Institute of Physics
Year
1989
Tongue
English
Weight
727 KB
Volume
55
Category
Article
ISSN
0003-6951

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Accelerated-ion beam doping during Si gr
Accelerated-ion beam doping during Si growth by molecular beam epitaxy and ion-enhanced In film deposition using a low-energy (40–300 eV) In ion source: M-A Hasan J Knall SA Barnett, Department of Physics, Linköping University, S-58183 Linköping, Sweden and J-E Sundgren, A Rockett and JE Greene, Department of Mettalurgy, the Coordinated Science Laboratory and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801, USA
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