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Photoluminescence studies of InGaAs/InAlAs strained double quantum wells

✍ Scribed by Shen, W. Z.; Shen, S. C.; Chang, Y.; Tang, W. G.; Chen, J. X.; Li, A. Z.


Book ID
120194336
Publisher
American Institute of Physics
Year
1996
Tongue
English
Weight
325 KB
Volume
80
Category
Article
ISSN
0021-8979

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## Abstract InGaAs(Sb)/GaAs double quantum wells (DQWs) structures grown with Sb assistance under different Sb/V ratios by metalorganic vapor‐phase epitaxy (MOVPE) have been characterized as a function of temperature in the temperature range between 17 and 300 K by the techniques of contactless ele