Photoluminescence internal quantum yield
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D. Martins; C. Gourdon; P. Lavallard; R. Planel
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Article
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1998
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Elsevier Science
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English
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We show that the internal quantum yield of a GaAs/AlAs superlattice (SL) can be directly obtained from the height of the step observed in the photoluminescence (PL) excitation spectrum of the underlying GaAs layer when the excitation energy is scanned across the SL transition. From a study of the de