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Photoluminescence internal quantum yield in superlattices

โœ Scribed by D. Martins; C. Gourdon; P. Lavallard; R. Planel

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
111 KB
Volume
23
Category
Article
ISSN
0749-6036

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โœฆ Synopsis

We show that the internal quantum yield of a GaAs/AlAs superlattice (SL) can be directly obtained from the height of the step observed in the photoluminescence (PL) excitation spectrum of the underlying GaAs layer when the excitation energy is scanned across the SL transition. From a study of the dependence of the SL and GaAs PL on the excitation power density and energy and on temperature, we are able to specify the conditions of applicability of this method. The importance of power non-linearities, reabsorption and photon recycling effects are discussed.

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