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Photoluminescence properties of SnO2 thin films grown by thermal CVD

✍ Scribed by Jin Jeong; Seong-Pyung Choi; Cha Ik Chang; Dong Chan Shin; Jin Sung Park; B-T Lee; Yeong-Jun Park; Ho-Jun Song

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
102 KB
Volume
127
Category
Article
ISSN
0038-1098

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✦ Synopsis

The photoluminescence properties of SnO 2 thin films grown by thermal chemical vapor deposition were investigated with different substrate temperatures. X-ray diffraction showed that the crystallinity of the grown thin films increased with increasing substrate temperature. Two narrow peaks and two broad peaks were observed from the photoluminescence measurements at 6 K. The intensity and shape of the broad peaks changed with increasing substrate temperature. It is concluded that the origin of the broad peak at 2.4 eV was due to oxygen vacancies and that of peak at 3.1 eV was related to structural defects.

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