Microwave properties of Halide-CVD grown BiSrCaCuO thin films
β Scribed by T. Nakamura; C. Yoshida; H. Yamawaki; M. Ihara
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 477 KB
- Volume
- 185-189
- Category
- Article
- ISSN
- 0921-4534
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β¦ Synopsis
We have studied the surface resistance (Rs) at 9.6GHz of CVD ~wn BiS~aCuO thin films. Rs val~ as low as 0.2m~ at 60K could be attained in films whose grain sizes are as large as 30ktm. The firms which consi~ of small grains (<0.Spin) showed a dependence of Rs on the rotational misalignments of ~ins. In highly ~nted films. Rs is about 0.6mf~ at 4K which is less than one third of that of rotationaly misaligned film.
π SIMILAR VOLUMES
The photoluminescence properties of SnO 2 thin films grown by thermal chemical vapor deposition were investigated with different substrate temperatures. X-ray diffraction showed that the crystallinity of the grown thin films increased with increasing substrate temperature. Two narrow peaks and two b