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Photoluminescence properties in GaGdN grown on GaN(0001) by PA-MBE

✍ Scribed by Higashi, K.; Hasegawa, S.; Sano, S.; Zhou, Y.K.; Asahi, H.

Book ID
122888122
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
695 KB
Volume
378
Category
Article
ISSN
0022-0248

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## Abstract GaGdN single layers and GaGdN/GaN short‐period superlattices (SLs) were grown on Al~2~O~3~(0001) substrates by radio frequency molecular beam epitaxy (RF‐MBE) and their magnetic and structural properties were investigated. Both types of samples exhibited ferromagnetic characteristics at