Photoluminescence of overgrown GaAs-GaAlAs quantum dots
β Scribed by H.E.G. Arnot; M. Watt; C.M. Sotomayor-Torres; R. Glew; R. Cusco; J. Bates; S.P. Beaumont
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 423 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0749-6036
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π SIMILAR VOLUMES
In an adiabatic approach, the efficiency of the electron-phonon interaction (EPI) can be determined by measuring the ratio between the intensities of two of the phonon replicas that EPI induces in photoluminescence (PL) spectra. In low-dimensional structures such as InAs/GaAs quantum dots (QDs), thi
We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum