✦ LIBER ✦

Photoluminescence of Hg1 −xCdxTe based heterostructures grown by molecular-beam epitaxy

✍ Scribed by K. D. Mynbaev; N. L. Bazhenov; V. I. Ivanov-Omskii; N. N. Mikhailov; M. V. Yakushev; A. V. Sorochkin; V. G. Remesnik; S. A. Dvoretsky; V. S. Varavin; Yu. G. Sidorov

Book ID: 111444986
Publisher: Springer
Year: 2011
Tongue: English
Weight: 227 KB
Volume: 45
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782611070153

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Photosensitive structures using Hg1−xCdx

Photosensitive structures using Hg1−xCdxTe solid solutions grown by molecular beam epitaxy

✍ A. V. Voitsekhovskii; A. P. Kokhanenko 📂 Article 📅 1998 🏛 Springer 🌐 English ⚖ 561 KB

Photoluminescence of AlxGa1−xAs/GaAs qua

Photoluminescence of AlxGa1−xAs/GaAs quantum well heterostructures grown by molecular beam epitaxy

✍ H. Jung; A. Fischer; K. Ploog 📂 Article 📅 1984 🏛 Springer 🌐 English ⚖ 924 KB

Photoluminescence of AlxGa1−xAs/GaAs qua

Photoluminescence of AlxGa1−xAs/GaAs quantum well heterostructures grown by molecular beam epitaxy

✍ H. Jung; A. Fischer; K. Ploog 📂 Article 📅 1984 🏛 Springer 🌐 English ⚖ 865 KB

Photoluminescence of AlxGa1−xAs/GaAs qua

Photoluminescence of AlxGa1−xAs/GaAs quantum well heterostructures grown by molecular beam epitaxy

✍ H. Jung; A. Fischer; K. Ploog 📂 Article 📅 1984 🏛 Springer 🌐 English ⚖ 42 KB

Charge-carrier lifetime in Hg1−xCdxTe (x

Charge-carrier lifetime in Hg1−xCdxTe (x=0.22) structures grown by molecular-beam epitaxy

✍ A. V. Voitsekhovskii; Yu. A. Denisov; A. P. Kokhanenko; V. S. Varavin; S. A. Dvo 📂 Article 📅 1997 🏛 Springer 🌐 English ⚖ 67 KB

Low-temperature activation of As in Hg1−

Low-temperature activation of As in Hg1−xCdxTe(211) grown on Si by molecular beam epitaxy

✍ P. Boieriu; Y. Chen; V. Nathan 📂 Article 📅 2002 🏛 Springer US 🌐 English ⚖ 448 KB