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Charge-carrier lifetime in Hg1−xCdxTe (x=0.22) structures grown by molecular-beam epitaxy

✍ Scribed by A. V. Voitsekhovskii; Yu. A. Denisov; A. P. Kokhanenko; V. S. Varavin; S. A. Dvoretskii; V. T. Liberman; N. N. Mikhailov; Yu. G. Sidorov


Book ID
110119526
Publisher
Springer
Year
1997
Tongue
English
Weight
67 KB
Volume
31
Category
Article
ISSN
1063-7826

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We have investigated the effect of substrate temperature (Ts varied from 410 to 560°C) on the crystalline and optical properties of In l\_x\_rGaxAlyAs layers grown on InP substrates by molecular beam epitaxy (MBE). The quaternary samples were analysed using double axis X-ray diffraction (XRD), low t