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Photoluminescence of gallium phosphide epitaxial layers doped with rare-earth elements

✍ Scribed by D. I. Brinkevich; S. A. Vabishchevich; N. A. Sobolev

Book ID
110584458
Publisher
Springer US
Year
1996
Tongue
English
Weight
228 KB
Volume
63
Category
Article
ISSN
0021-9037

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✍ H. L'Haridon; A. Le Corre; S. SalaΓΌn; D. Lecrosnier; A. Passaret; A. Godefroy; M πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 914 KB

Iron-doped indium phosphide layers were grown by gas source molecular beam epitaxy with a high purity solid iron source. The iron concentration varied from some 1016 cm -3 to a few 10 ~9 cm -3. N-i-n or n+-i-n + layer structures were realized on two types of substrate: semi-insulating or n Γ·. Some i