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Photoluminescence of biased GaAs/AlxGa1−xAs double quantum wells — many-body effects

✍ Scribed by M. Zvára; R. Grill; P. Hlı́dek; M. Orlita; J. Soubusta

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
150 KB
Volume
12
Category
Article
ISSN
1386-9477

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✦ Synopsis

Photoluminescence (PL) spectra of an MBE-grown symmetric 10 nm wide double quantum well located in the intrinsic region of a p-i-n diode were investigated in electric and magnetic ÿelds. In addition to the commonly reported spatially direct (DX) and indirect transitions, we observed in the spectra a new PL band, placed independently of the applied electric ÿeld ≈ 5 meV below the DX peak. Furthermore, we observed a slight shift of the DX transition to lower energies in a strong inversion accompanied by a simultaneous transfer of its intensity to a new band emerging ≈ 1:5 meV below the DX energy. The new PL bands were interpreted as a recombination of DX excitons, coupled by Coulomb interaction to 2D degenerate electron or hole gases in the adjacent well.

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