Transmission Electron Microscopy of Be I
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Kroon, R.E. ;Neethling, J.H. ;Zolper, J.C.
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Article
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2000
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John Wiley and Sons
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English
โ 264 KB
Be ions were implanted into degenerately Si-doped GaAs at 300 keV to a dose of 10 15 cm ร2 . The region near the projected range remained crystalline, and subthreshold defects formed at this depth after annealing at 450-500 C. The defects are identified as circular prismatic perfect interstitial loo