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Photoluminescence of Be implanted Si-doped GaAs

โœ Scribed by R. E. Kroon; J. R. Botha; J. H. Neethling; T. J. Drummond


Book ID
107457948
Publisher
Springer US
Year
1999
Tongue
English
Weight
149 KB
Volume
28
Category
Article
ISSN
0361-5235

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Be ions were implanted into degenerately Si-doped GaAs at 300 keV to a dose of 10 15 cm ร€2 . The region near the projected range remained crystalline, and subthreshold defects formed at this depth after annealing at 450-500 C. The defects are identified as circular prismatic perfect interstitial loo

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