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Photoluminescence measurements of the 1.55 eV band of Ge doped AℓxGa1−xAs

✍ Scribed by M.T. Furtado; J.P. von der Weid

Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
346 KB
Volume
54
Category
Article
ISSN
0038-1098

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A theoretical comparison of the electronic structures of long-period (about \(300 \AA\) ) \(\mathrm{N}_{\mathrm{GaAs}} \times \mathrm{N}_{\mathrm{A} \ell \mathrm{GaAs}} \mathrm{GaAs} / \mathrm{A \ell}_{0.3} \mathrm{Ga}_{0.7}\) As superlattices grown along the [111] direction and superlattices grown