Comparison of the calculated electronic structures of [111] and [001] GaAs/AℓxGa1-xAs semiconductor superlattices
✍ Scribed by Shang Yuan Ren; John D. Dow
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 175 KB
- Volume
- 13
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
A theoretical comparison of the electronic structures of long-period (about (300 \AA) ) (\mathrm{N}{\mathrm{GaAs}} \times \mathrm{N}{\mathrm{A} \ell \mathrm{GaAs}} \mathrm{GaAs} / \mathrm{A \ell}{0.3} \mathrm{Ga}{0.7}) As superlattices grown along the [111] direction and superlattices grown along the [001] direction is presented. Almost all qualitative features of the theoretical results are in good agreement with experiments by Hayakawa et al. The observed optical transition enhancement in the [111]-oriented quantum-well structures is caused by the topological difference in the superlattices, and is only partly due to the fact that the heavy holes in the [111] superlattices have larger transverse effective masses, and therefore have larger two-dimensional valence band densities of states.