✦ LIBER ✦

Photoluminescence investigation of ZnO:P nanoneedle arrays on InP substrate by pulsed laser deposition

✍ Scribed by D.Q. Yu; L.Z. Hu; J. Li; H. Hu; H.Q. Zhang; J.M. Bian; J.X. Zhu; S.S. Qiao; X. Chen; B. Wang

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 525 KB
Volume: 255
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2008.11.041

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effects of substrate parameters on struc

Effects of substrate parameters on structure and optical properties of ZnO thin films fabricated by pulsed laser deposition

✍ X.Q. Wei; J.Z. Huang; M.Y. Zhang; Y. Du; B.Y. Man 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 741 KB

Properties of ZnO thin films grown on Si

Properties of ZnO thin films grown on Si substrates in vacuum and oxygen ambient by pulsed laser deposition

✍ Jie Zhao; Lizhong Hu; Weifeng Liu; Zhaoyang Wang 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 284 KB

Preparation of C-axis textured LiNbO3 th

Preparation of C-axis textured LiNbO3 thin films on SiO2/Si substrates with a ZnO buffer layer by pulsed laser deposition process

✍ Wen-Ching Shih; Xiao-Yun Sun 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 400 KB

An investigation into the effects of hig

An investigation into the effects of high laser fluence on hydroxyapatite/calcium phosphate films deposited by pulsed laser deposition

✍ Le Quang Tri; Daniel H.C. Chua 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 533 KB

The effect of crystalline structure on p

The effect of crystalline structure on photoluminescence of the - FeSi2 film prepared by pulsed laser deposition using two types of target

✍ M. Zakir Hossain; H. Katsumata; S. Uekusa 📂 Article 📅 2011 🏛 Elsevier 🌐 English ⚖ 665 KB

Ecological friendly -FeSi 2 thin film has been formed on FZ-Si (111) substrates using sintered FeSi 2 (purity 99.99%) and electrolytic Fe (purity 99.99%) targets by pulsed laser deposition (PLD) method in an ArF ( 193 nm) excimer laser. Subsequently the prepared thin films were annealed at 900 o C.

Comparison of ZnO:GaN films on Si(1&#xa0

Comparison of ZnO:GaN films on Si(1 1 1) and Si(1 0 0) substrates by pulsed laser deposition

✍ N. Gopalakrishnan; B.C. Shin; H.S. Lim; G.Y. Kim; Y.S. Yu 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 241 KB