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Photoluminescence in wurtzite GaN containing carbon

✍ Scribed by Reshchikov, Michael A.; Patillo, Random H.; Travis, Kathleen C.


Book ID
118056285
Publisher
Cambridge University Press
Year
2005
Weight
163 KB
Volume
892
Category
Article
ISSN
0272-9172

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Partial dislocations in wurtzite GaN
✍ Ph. Komninou; J. Kioseoglou; G. P. Dimitrakopulos; Th. Kehagias; Th. Karakostas πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 926 KB

## Abstract The partial dislocations in wurtzite‐structured GaN are reviewed and new results are presented. A multiplicity of partials is possible depending on stacking fault (SF) type, orientation, and interactions. The partials that delimit the __I__~1~ intrinsic basal SFs have 5/7, 8, or 12‐atom