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Photoluminescence from germanium quantum wells and quantum dots in silicon grown by MBE at low temperature

✍ Scribed by T. M. Burbaev; V. A. Kurbatov; A. O. Pogosov; M. M. Rzaev; N. N. Sibel’din

Book ID
110133659
Publisher
Springer
Year
2003
Tongue
English
Weight
49 KB
Volume
37
Category
Article
ISSN
1063-7826

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## Abstract We report on the fabrication of germanium quantum dots on silicon oxide and their growth mechanism. Germanium quantum dots were deposited by inductively‐coupled plasma CVD at 400 °C. Gold nanoparticles, attached to silicon oxide through a self‐assembled monolayer, were adopted as cataly