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Photoluminescence decay in the ps time regime and structural properties of pulsed-laser deposited GaN

โœ Scribed by P. Sanguino; M. Niehus; L. Melo; R. Schwarz; A. Fedorov; J.M.G. Martinho; M.J. Soares; T. Monteiro


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
306 KB
Volume
340-342
Category
Article
ISSN
0921-4526

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The effects of substrate temperature on
โœ O.M. Ntwaeaborwa; P.D. Nsimama; J.T. Abiade; E. Coetsee; H.C Swart ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 489 KB

In this study, SrAl 2 O 4 :Eu 2 + ,Dy 3 + thin film phosphors were deposited on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. The films were deposited at different substrate temperatures in the range of 40-700 1C. The structure, morphology and topography of the films were