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Photoluminescence characteristics of Se-doped ZnGa2O4:Mn2+thin-film phosphors grown by pulsed laser deposition on Al2O3(0001) substrates

✍ Scribed by S.S. Yi; J.S. Bae; B.K. Moon; J.H. Jeong; J.H. Kim


Publisher
Springer
Year
2005
Tongue
English
Weight
504 KB
Volume
81
Category
Article
ISSN
1432-0630

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In this study, SrAl 2 O 4 :Eu 2 + ,Dy 3 + thin film phosphors were deposited on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. The films were deposited at different substrate temperatures in the range of 40-700 1C. The structure, morphology and topography of the films were