Photoluminescence and Raman scattering spectra were used to study three types of free-standing porous Si: as-grown samples with various porosities referred to as APS samples, these samples oxidized in air at 200 C for 200 h as OPS samples, and these samples aged further in air at room temperature fo
✦ LIBER ✦
Photoluminescence and Raman spectroscopy in porous SiC
✍ Scribed by T.V. Torchynska; A. Díaz Cano; S. Jiménez Sandoval; M. Dybic; S. Ostapenko; M. Mynbaeva
- Book ID
- 111713385
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 138 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0026-2692
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Depth profiles of photoluminescence (PL) and Raman scattering properties of anodized porous Si have been studied by micro-measurement techniques. The depthstructural-inhomogeneity strongly affects the optical properties of porous Si. The Si 2p absorption edge of porous Si has been examined with sync