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Photoluminescence and Raman Spectroscopy Characterization of Boron- and Nitrogen-Doped 6H Silicon Carbide

✍ Scribed by Ou, Yi Yu; Jokubavicius, Valdas; Liu, Chuan; Berg, Rolf W.; Linnarsson, Margareta K.; Kamiyama, Satoshi; Lu, Zhao Yue; Yakimova, Rositza; Syväjärvi, Mikael; Ou, Hai Yan

Book ID
121325250
Publisher
Trans Tech Publications, Ltd.
Year
2012
Tongue
English
Weight
281 KB
Volume
717-720
Category
Article
ISSN
1662-9752

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## Abstract Hot filament chemically vapor deposited (HFCVD) boron doped diamond films were grown on monocrystalline silicon (111) doped with B/C ratios of 4000, 8000 and 12,000 ppm. Scanning electron micrographs show that the films are composed of well‐faceted microcrystallites ranging in size from