Photoluminescence and Raman Scattering of ZnSeZnTe Superlattices
✍ Scribed by Ozaki, H. ;Suzuki, D. ;Imai, K. ;Kumazaki, K.
- Publisher
- John Wiley and Sons
- Year
- 1992
- Tongue
- English
- Weight
- 515 KB
- Volume
- 133
- Category
- Article
- ISSN
- 0031-8965
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📜 SIMILAR VOLUMES
We have grown short-period Z&e-ZnTe superlattices using low-pressure MOVPE. The influence of the growth parameters was investigated in detail. Combination of optical characterization with a tight-binding calculation gives a value of 200 meV for the strain-free valence band offset.
## Abstract Photoluminescence and photoluminescence excitation spectra, vertical transport of photoexcited charge carriers and excitons and Raman scattering by optical phonons have been studied for the first time in low‐strained superlattices CdSe/CdMgSe grown by molecular‐beam epitaxy on InAs subs