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MOVPE-growth and physics of ZnSe-ZnTe superlattices

✍ Scribed by T. Cloitre; O. Briot; B. Gil; D. Bertho; J.M. Jancu; B.E. Ponga; P. Boring; H. Mathieu; C. Jouanin; R.L. Aulombard

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
219 KB
Volume
185
Category
Article
ISSN
0921-4526

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✦ Synopsis

We have grown short-period Z&e-ZnTe superlattices using low-pressure MOVPE.

The influence of the growth parameters was investigated in detail. Combination of optical characterization with a tight-binding calculation gives a value of 200 meV for the strain-free valence band offset.

πŸ“œ SIMILAR VOLUMES

MOVPE Growth and optical characterizatio
MOVPE Growth and optical characterization of ZnSe/ZnS strained layer superlattices
✍ L. Aigouy; N. Briot; D. Bouchara; T. Cloitre; M. di Blasio; B. Gil; J. Calas; O. πŸ“‚ Article πŸ“… 1994 πŸ› Elsevier Science 🌐 English βš– 236 KB

We have grown \(\mathrm{ZnSe} / \mathrm{ZnS}\) superlattices using low pressure MOVPE. The superlattices were grown onto a relaxed \(\mathrm{ZnSe}\) buffer and were constituted of 45 periods. The well and barrier thicknesses were chosen from the calculation of critical thicknesses for coherent and f