๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Photoluminescence and pressure effects in short period InN/nGaN superlattices

โœ Scribed by Staszczak, G.; Gorczyca, I.; Suski, T.; Wang, X. Q.; Christensen, N. E.; Svane, A.; Dimakis, E.; Moustakas, T. D.


Book ID
120060951
Publisher
American Institute of Physics
Year
2013
Tongue
English
Weight
814 KB
Volume
113
Category
Article
ISSN
0021-8979

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Identification of zone boundary and inte
โœ T. Gilmour; P.C. Klipstein; W.R. Tribe; G.W. Smith ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 89 KB

We present the first identification of the direct participation of the GaAs interface (IF) mode in the phonon-assisted recombinations from type-II GaAs/AlAs short-period superlattices (SPSL). This is achieved by utilizing a novel first-order resonant Raman process associated with the type-II X z -ba