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Photoluminescence and electroluminescence properties of a-Si1−xNx:H based superlattice structures

✍ Scribed by C. Summonte; R. Rizzoli; R. Galloni; F. Giorgis; F. Giuliani; C.F. Pirri; E. Tresso; A. Desalvo; F. Zignani; P. Rava


Book ID
117148997
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
130 KB
Volume
227-230
Category
Article
ISSN
0022-3093

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On photoluminescence properties of a-Si:
✍ R. Brunner; E. Pinčík; H. Kobayashi; M. Kučera; M. Takahashi; J. Rusnák 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 671 KB

Non-Gaussian photoluminescence peaks observed in a-Si:H-based structures at 6 K are interpreted as a consequence of the presence of different phases in material. Thin films of amorphous silicon deposited on glass substrate have been analyzed. The main aims of the contribution are (i) analysis of nu