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Photolithographic Route to the Fabrication of Micro/Nanowires of III–V Semiconductors

✍ Scribed by Y. Sun; D.-Y. Khang; F. Hua; K. Hurley; R. G. Nuzzo; J. A. Rogers

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
696 KB
Volume
15
Category
Article
ISSN
1616-301X

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Cover Picture: Photolithographic Route to the Fabrication of Micro/Nanowires of III–V Semiconductors (Adv. Funct. Mater. 1/2005)
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## Abstract The cover shows a patterned assembly of GaAs nanowires with their ends tethered to a bulk single‐crystal wafer as described on p. 30 by Rogers and co‐workers. These wires, which have triangular cross‐sections, were fabricated via a top–down process that combines photolithography and ani

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Structural trends in group III-V semiconductor nanowires (NWs) are systematically investigated based on Monte-Carlo simulations using our empirical potential calculations. The calculated NW stacking sequences for the selective area growth demonstrate that the averaged periodicity between wurtzite se