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Photoemission investigation of Sb/GaAs(110) interfaces

✍ Scribed by R. Cao; K. Miyano; T. Kendelewicz; I. Lindau; W.E. Spicer

Book ID
118362096
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
938 KB
Volume
206
Category
Article
ISSN
0039-6028

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The band bending changes due to deposition of Sb on cleaved GaAs(1 1 0) surfaces are studied by UV photoemission spectroscopy (UPS). The band bending vs coverage curves are evaluated from measurements of the work function change AΒ’ and a determination of the surface dipole contribution within Aqk Fo