The schottky-barrier of GaAs(110)-Sb studied by UV photoemission

✍ Scribed by M. Mattern-Klosson; H. Lüth

• Publisher: Elsevier Science
• Year: 1985
• Tongue: English
• Weight: 294 KB
• Volume: 56
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/s0038-1098(85)80044-2

✦ Synopsis

The band bending changes due to deposition of Sb on cleaved GaAs(1 1 0) surfaces are studied by UV photoemission spectroscopy (UPS). The band bending vs coverage curves are evaluated from measurements of the work function change A¢ and a determination of the surface dipole contribution within Aqk For both n-and p-type material depletion layers are formed with saturation band bendings of 650 meV and --500 meV, respectively. These values are essentially reached for Sb coverages around 0.1 monolayer. The results fit well to predictions of the defect model for the explanation of Schottky-barriers on I I I -V compound semiconductor surfaces.