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Photoelectronic properties of n-GaSe

✍ Scribed by Manfredotti, C. ;Murri, R. ;Quirini, A. ;Vasanelli, L.

Publisher
John Wiley and Sons
Year
1976
Tongue
English
Weight
517 KB
Volume
38
Category
Article
ISSN
0031-8965

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Photoconductivity of a non-intentionally doped GaN layer is observed for above band gap excitation. No below band gap excitation causes photoconductivity, but photoconductivity is optical quenched at energies of 1.28, 1.41, 1.53 and %2eV. The dark current and the yellow photoluminescence band show t