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Photoelectric properties of selenium doped p+-n-n+ silicon structure

✍ Scribed by V.M. Arutyunyan; R.S. Barseghyan; G.E. Grigoryan; V.A. Mkhikyan; B.O. Semerdjian

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Transport properties of heavily doped N-

✍ M. Balkanski; A. Geismar 📂 Article 📅 1966 🏛 Elsevier Science 🌐 English ⚖ 276 KB

Electronic properties of heavily-doped n

✍ A. Selloni; S.T. Pantelides 📂 Article 📅 1983 🏛 Elsevier Science ⚖ 146 KB

Photoelectric, stoichiometric and struct

✍ H.Y. Kim; J.H. Kim; M.O. Park; S. Im 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 319 KB

Forward transient characteristics of gol

✍ Peters, D.W.; Shipley, M. 📂 Article 📅 1968 🏛 IEEE 🌐 English ⚖ 539 KB

Small-signal impedance of gold-doped P+-

✍ Peters, D.W. 📂 Article 📅 1969 🏛 IEEE 🌐 English ⚖ 249 KB

Photoelectric properties of the M–n-In2O

✍ Gazakov, O. ;Orazberdyev, A. Kh. ;Charyev, Ya. 📂 Article 📅 1987 🏛 John Wiley and Sons 🌐 English ⚖ 287 KB