Preparation and optical properties of wi
β
W. Gebhardt
π
Article
π
1992
π
Elsevier Science
π
English
β 647 KB
Large gap II-VI semiconductors have direct band gaps with gap energies ranging from 3.84 (ZnS) to 1.44 eV (CdTe) at RT. They promise optoelectronic devices operating in the visible spectral range. However, a large number of defects and difficulties in preparing n-and p-type material have hampered a