Reflectance ( \(R\) ) and thermoreflectance (TR) of quantum well structures grown by MBE have been investigated at low temperature ( \(30 \mathrm{~K}\) ) in order to demonstrate the capabilities of \(T R\) to study quantum confined systems. Our results show that low temperature \(T R\) is a simple a
Photoelectric behaviour of lattice-matched GaAs/AlxGa1-xAs quantum well electrodes
โ Scribed by Yao Liu; Xurui Xiao; Yiping Zeng; Chunhui Yan; Haiqun Zheng; Dianzhao Sun
- Book ID
- 105645822
- Publisher
- SP Science China Press
- Year
- 1997
- Tongue
- English
- Weight
- 369 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1674-7283
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๐ SIMILAR VOLUMES
Energy levels of electrons in nonabrupt \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}_{1-x} \mathrm{As}\) single quantum wells are calculated with and beyond the constant interfacial effective mass approximation (CIEMA), and compared with those of abrupt \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}
The interfacial behavior of the single quantum well (SQW) GaAs/AlxGa I \_xAs electrode in HQ/BQ and Fc/Fc + electrolytes was characterized respectively by studying the quantum confined Stark effect and Franz-Keldysh oscillation with electrolyte electroreflectance spectroscopy. The interaction of the