The molecular geometry of cis-and tram-HONO in the So and S, states as well as the S, (na\*) +S, transition energy were calculated by ab initio methods (CI, MCSCF). Together with S,-potential energy surface calculations in three dimensions
Photodissociation of methylnitrite: an mc scf calculation of the S1 potential surface
β Scribed by M. Nonella; J.Robert Huber
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 375 KB
- Volume
- 131
- Category
- Article
- ISSN
- 0009-2614
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β¦ Synopsis
Using the MC SCF method, the S1 potential-energy surface of cis-methylnitrite has been calculated to be dissociative, giving rise to the process CH30NO+ CHsO' + NO. Features of this surface are discussed in the light of recent experimental findings.
π SIMILAR VOLUMES
The numeri~l procedure or McCullough is used in calculaGtns or Harrrtzz-Fock nnd hlC SCF waveruntxions for ground spate of N2\_ The la~cr are derived using the complete set of 1s spin and symmc~ry adapted configurnlions in the space or MOs lhnt arise from 7p ntomic orbilals. An incrust in disuxialio
Pseudopotential ab initio calculations at the SCF level have ken performed on the potential surface of H,P-H-X (X = F, Cl, Br, I) and (CH&P-H-I. In all cases a minimum structure results corresponding to a hydrogen bond complex. For the system with the stronger basic trimethylphosphine, a second mini
In an earlier paper (P. C. Gomez, P. R. Bunker. A. Karpfen, and H. Lischka, J. Mol. Spectrosc. 166, 44I-448, 1994) we calculated three-dimensional \(a b\) initio potential energy surfaces for the \(\mathrm{HCl}\) dimer at five different values of the dimer stretching coordinate \(R\) (the two \(\mat
WC have calculated 64 points on the ground electronic state potential energy surface of the silyl radical (SiHs) using the MRD CI technique. This potential surface gives an inversion barrier of 1951 cm-' and an equilibrium geometry of re = 1.480 A and ae(HSiH) = 1 1 1 .?. Using the non-rigid inverto