✦ LIBER ✦

Photoconductivity of undoped, nitrogen- and boron-doped CVD- and synthetic diamond

✍ Scribed by Rohrer, E.; Nebel, C.E.; Stutzmann, M.; Flöter, A.; Zachai, R.; Jiang, X.; Klages, C.-P.

Book ID: 120528652
Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 553 KB
Volume: 7
Category: Article
ISSN: 0925-9635
DOI: 10.1016/S0925-9635(97)00318-X

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrochemical characteristics of boron

Electrochemical characteristics of boron-doped, undoped and nitrogen-doped diamond films

✍ Zhang, Yanrong; Yoshihara, Sachio; Shirakashi, Takashi; Kyomen, Toru 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 289 KB

Thermoluminescence properties of undoped

Thermoluminescence properties of undoped and nitrogen-doped CVD diamond exposed to gamma radiation

✍ M. Barboza-Flores; S. Gastélum; E. Cruz-Zaragoza; R. Meléndrez; V. Chernov; M. P 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 228 KB

Comparison of the hole mobility in undop

Comparison of the hole mobility in undoped and boron-doped polycrystalline CVD diamond films

✍ Yuri Pleskov; Alik Tameev; Valentin Varnin; Irina Teremetskaya 📂 Article 📅 1998 🏛 Springer 🌐 English ⚖ 124 KB

Temperature evolution of photocurrent sp

Temperature evolution of photocurrent spectra in undoped and boron-doped homoepitaxial CVD diamond film

✍ Murayama, K.; Kodaira, N.; Makino, T.; Kubo, T.; Ogura, M.; Ri, S.; Takeuchi, D. 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 161 KB

Structural changes in CVD diamond film b

Structural changes in CVD diamond film by boron and nitrogen doping

✍ Show, Yoshiyuki; Matsukawa, Toshikazu; Ito, Hirokazu; Iwase, Mitsuo; Izumi, Tomi 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 120 KB

Compensation in boron-doped CVD diamond

✍ Gabrysch, Markus ;Majdi, Saman ;Hallén, Anders ;Linnarsson, Margareta ;Schöner, 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 438 KB

## Abstract Hall‐effect measurements on single crystal boron‐doped CVD diamond in the temperature interval 80–450 K are presented together with SIMS measurements of the dopant concentration. Capacitance–voltage measurements on rectifying Schottky junctions manufactured on the boron‐doped structures