Photochemical hole-burning in excited vibrational states of the S1←S0 transitīon of frēe-base porphin in an n-octane crystal
✍ Scribed by S. Voelker; R.M. Macfarlane
- Book ID
- 107796945
- Publisher
- Elsevier Science
- Year
- 1979
- Tongue
- English
- Weight
- 97 KB
- Volume
- 18-19
- Category
- Article
- ISSN
- 0022-2313
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📜 SIMILAR VOLUMES
We report a study of the temperature dependence of the homogeneous width and frequency of the Sr + So O-O transitions of free-base pozphin as a guest in an n-octane matrix In the liquid helium temperature region, the measurements have been made by means of photochemicaf hole-burning, at hi&er temper
Tr.msien: and photochemical hole-burning is used to determine the homqeneous linewidths of the S, + So and Su t So . transitions of a magwsium porphin-pyridine comptex in four sites of n-octane (T= 1.1-4.2 I;). Thermally induced dephas-' ins of S, .-So is consistent 1% ith "exchange" to low-frequenc
St ~rl, rxprrmlrnts rlrc reporwd on the Si -So O-O transitions of chlonn (7.8-dihydroporphin) and its photorsomer m dilrfcrLn1 utrc tn u-iwune .md aoct.me single cry\t.ds b) photochemical hole-burnmgat 1 2 I<. For chlorin fifi=+O.23 I) \\a111 +kja(So) I or Uie photoproduct we esrmwe JI(SI) = 2 2 D