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Photo-oxidation effects in porous silicon luminescence

โœ Scribed by Koropecki, R. R.; Arce, R. D.; Schmidt, J. A.

Book ID
120536585
Publisher
The American Physical Society
Year
2004
Tongue
English
Weight
76 KB
Volume
69
Category
Article
ISSN
1098-0121

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A theoretical surface-state model of poroussilicon luminescence is proposed. The temperature effect on the PhotoLuminescence (PL) spectrum for pillar and spherical structures is considered, and it is found that the effect is dependent on the doping concentration, the excitation strength, and the sha