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Photo-magneto-electric effect in semi-insulating GaAs: carrier lifetimes and influence of the defect structure

✍ Scribed by Kažukauskas, V.


Book ID
120636840
Publisher
Springer
Year
1995
Tongue
English
Weight
678 KB
Volume
60
Category
Article
ISSN
1432-0630

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It is shown that in undoped semi-insulating GaAs crystals grown under the stoichiometric conditions both correlated and anticorrelated dependences of the minority carrier lifetime T on the dislocation density Nd could be observed. The above-pointed effect is connected with a slight excess of Ga atom