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Photo-induced interband absorption in group-III nitride quantum wells

✍ Scribed by S. Kalliakos; P. Lefebvre; T. Taliercio


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
82 KB
Volume
17
Category
Article
ISSN
1386-9477

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Localized and free excitons in GaN/Al 0.17 Ga 0.83 N quantum wells are studied by time-resolved photoluminescence (PL) versus temperature. We focus more particularly on 16-monolayer wide quantum wells for which, at T ΒΌ 8 K, we observe double excitonic features. We assign the latter to two different