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Phosphorus incorporation and activity in (100)-oriented homoepitaxial diamond layers

✍ Scribed by Frangieh, G. ;Pinault, M.-A. ;Barjon, J. ;Tillocher, T. ;Jomard, F. ;Chevallier, J.

Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
151 KB
Volume
206
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

In this work, we present a study about the homoepitaxial growth of phosphorus‐doped diamond on (100) substrates. The growth was performed by microwave plasma assisted chemical vapor deposition (MPCVD) adding an organic precursor for phosphorus (tertiarybutylphosphine: TBP) in the gaseous phase. We show that phosphorus is incorporated in (100) chemical vapor deposition (CVD) diamond as proved by secondary ion mass spectrometry (SIMS). The recombination of excitons bound to phosphorus donors is observed by cathodoluminescence (CL) spectroscopy. The influence of the growth parameters on the phosphorus donor activity is investigated. We show that the [C*]/[H~2~] ratio is a key parameter for controlling the P‐donor activity when diamond is grown on (100) surfaces.

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