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Phosphorus doping and deposition pressure effects on optical and electrical properties of polysilicon

✍ Scribed by M. Zaghdoudi; M.M. Abdelkrim; M. Fathallah; T. Mohammed-Brahim; R. Rogel

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
152 KB
Volume
26
Category
Article
ISSN
0928-4931

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## Abstract In the modern MOS‐based device the poly‐silicon morphological and electrical properties play a very important role for the final die performance. In particular for flash memory devices, due to the continuous shrinkage, it is very important to control the relationship between process par