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Phonon relaxation rates due to impurities in crystals

โœ Scribed by M.D. Tiwari


Publisher
Elsevier Science
Year
1970
Tongue
English
Weight
133 KB
Volume
32
Category
Article
ISSN
0375-9601

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Reduction in relaxation time due to ioni
โœ J.H. Park; S. Senzaki; N. Mori; C. Hamaguchi ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 117 KB

Time-resolved photoluminescence measurements in ฮด-doped GaAs/AlGaAs on the quantum well structures are performed to study effects of ionized impurities relaxation process of photoexcited carriers. It is theoretically shown that a thin quantum well with a ฮด-doping layer inserted in the barrier layer