Phonon-assisted tunneling in coupled semiconductor quantum dots
✍ Scribed by López-Richard, V.; Oliveira, S.; Hai, G.-Q.
- Book ID
- 111679484
- Publisher
- The American Physical Society
- Year
- 2005
- Tongue
- English
- Weight
- 147 KB
- Volume
- 71
- Category
- Article
- ISSN
- 1098-0121
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📜 SIMILAR VOLUMES
The di erential cross section (DCS) for an electron Raman scattering (ERS) process in a semiconductor quantum dot (QD) of spherical geometry regarding phonon-assisted transitions, is calculated for T = 0 K. We present a complete description of the phonon modes of spherical structures embedded in ano
We describe photon assisted tunneling (PAT) in single and coupled quantum dot systems which have a relatively large zero-dimensional (0D) level separation. A microwave electric field applied across the tunneling barrier leads to the formation of a sideband structure. For a single quantum dot system,