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Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

✍ Scribed by Rogdakis, K; Poli, S; Bano, E; Zekentes, K; Pala, M G

Book ID: 121513001
Publisher: Institute of Physics
Year: 2009
Tongue: English
Weight: 595 KB
Volume: 20
Category: Article
ISSN: 0957-4484
DOI: 10.1088/0957-4484/20/29/295202

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