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Phenomena in silicon nanostructure devices

✍ Scribed by R. Tsu

Book ID: 106022905
Publisher: Springer
Year: 2000
Tongue: English
Weight: 278 KB
Volume: 71
Category: Article
ISSN: 1432-0630
DOI: 10.1007/s003390000552

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## Abstract Anisotropic nanostructuring of bulk silicon (Si) wafers leads to a significant in‐plane optical anisotropy of single porous silicon (PSi) layers. Additionally a variation of the etching current in time allows a controlled modification of the porosity along the growth direction and there